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Semiconductor analysis with Raman spectroscopy

Modern electronics use a wide range of semiconductor materials. Cutting edge devices, such as transistors, solar cells and light emitting diodes, push materials properties to their limits, and require extremely homogeneous source materials. Raman spectroscopy is an ideal tool for studying semiconductors.

Characterise semiconductors

You can use Raman to characterise and generate images of all semiconductors (e.g. Si, carbon-based, III-V's, and polymers) and superconductors. A wide range of information can be revealed, including:

  • chemical composition (e.g. alloy fractions of compound semiconductors)
  • polytypes (e.g. 4H-SiC and 6H-SicC)
  • strain/stress
  • dopant concentrations
  • thin film thickness
  • crystal structure type and orientation
  • crystal quality
  • uniformity and purity
  • device temperature

Easy analysis

Raman analysis is simple because it requires no sample preparation. It does not require vacuum technology, or suffer from charging effects experienced with electron microscopy.

Renishaw can configure your Raman system to suit all users, from research scientists to technicians.

Large area analysis
Renishaw Raman systems can analyse very large samples. For example, you can generate images of entire wafers to discover contaminants or residual stresses.

PL characterisation
Renishaw's Raman systems also enable you to collect and analyse photoluminescence (PL) spectra. You can collect both vibrational and electronic information with one instrument.

Online systems
Add Renishaw's Raman systems to your production line to conduct online analysis for quality control purposes. Diagnose problems early, reduce waste and improve yield.

Reliable results
Renishaw's Raman systems produce highly repeatable data that accurately represents the sample. In-built automated calibration and health checking ensure data can be accurately compared, no matter when collected.

3D Raman map of a Silicon Carbide wafer

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AN225(EN)-01-A Application note Photocurrent measurements on the inVia confocal Raman microscope Thumbnail
Application note: Photocurrent measurements on the inVia™ confocal Raman microscope
When light interacts with semiconducting materials, it can induce electrical currents, called photocurrents. These currents carry information about the electronic, optical, and charge transport properties of the material. Read how photocurrent mapping can complement Raman imaging, which identifies chemical and structural variation in the material.
AN206(EN)-01-A Application note Analyse compound semiconductors with the inVia Raman microscope Thumbnail
Application note: Analyse compound semiconductors with the inVia™ Raman microscope
Raman and photoluminescence (PL) microscopy are ideal characterisation tools for compound semiconductor devices. We demonstrate this by analysing the epilayer thickness, wafer bow and stress across an AlGaN/GaN heterostructure wafer. Next, we performed 3D Raman imaging on GaN microstructures. Finally, we show how Raman thermography can be used to improve the performance of HEMT devices.
AN177(EN)-02-C Analyse silicon carbide with inVia Thumbnail
Application note: Analyse silicon carbide (SiC) with the inVia Raman microscope
The properties of silicon carbide are dependent on crystal structure and the presence of defects. Manufacturers of silicon carbide devices need to control these attributes to enhance yield. Discover how Raman microscopy can map the different polytypes of SiC over large areas. You can also perform 3D Raman imaging to study subsurface inclusions or defects, and any associated stresses.
NF112 Identifying imperfections with Raman spectroscopy thumbnail
News release: Identifying imperfections with Raman spectroscopy
Appearing in Compound Semiconductor magazine, this article describes how Raman spectroscopy can routinely map SiC wafers in little more than an hour. Explore how 3D Raman imaging of semiconductor materials can help engineers understand the origin of defects.

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